Wse2极性可控器件

Giovanni V. Resta, I. Radu, G. Micheli, P. Gaillardon
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引用次数: 0

摘要

本书章节专门介绍了用二维(2D)半导体二硒化钨(WSe2)制造的极性可控器件。本章的组织如下:首先,介绍二维材料的一般介绍,然后是专门总结二维材料发展现状的一节。然后介绍了双极性的概念,并给出了WSe2双极性器件的主要实验结果。然后我们过渡到本章的核心部分,描述了用双极性WSe2制造的极性可控晶体管的最新进展。然后,我们将重点放在量子输运模拟上,以评估器件在超尺度栅极长度下的性能。我们以总结结束,突出所提出的主要概念。
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Wse2 polarity-controllable devices
The book chapter is dedicated to polarity-controllable devices fabricated with two dimensional (2D) semiconducting tungsten diselenide (WSe2). The chapter is organized as follows: first, a general introduction on 2D materials is presented, followed by a section dedicated to summarize the state of the art in the growth of 2D materials. The concept of ambipolarity is then introduced, and the main experimental results on WSe2 ambipolar devices are presented. We transition then to the core part of the chapter describing recent advances in polarity-controllable transistors fabricated with ambipolar WSe2. We then focus on quantum transport simulations carried out to assess the performances of the devices at ultra-scaled gate lengths. We conclude with a summary, highlighting the main concept presented.
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Ultrafine grain FPGAs with polarity controllable transistors Physical design of polarity controllable transistors CNT and SiNW modeling for dual-gate ambipolar logic circuit design Carrier type control of MX2 type 2D materials for functionality-enhanced transistors BCB benchmarking for three-independent-gate field effect transistors
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