A. Kasukawa, R. Bhat, C. Zah, M. Koza, S. Schwarz, T. Lee
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200 A/cm/sup 2/ Threshold Current Density 1.5/spl mu/m Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By Omcvd
Summary form only given. The authors report 1.5 mu m GaInAs/AlGaInAs GRIN-SCH SL (strained layer) QW (quantum well) LDs (laser diodes) having both compressive and tensile strain in the well. They were grown by low-pressure organometallic chemical vapor deposition (OMCVD). Very low threshold current densities of 200 and 400 A/cm/sup 2/ were obtained in tensile and compressive SL QW LDs, respectively. The characteristic temperatures were 60 K for a lattice-matched QW LD, 72 K for a compressive SL QW LD, and 50 K for a tensile SL QW LD. Lasing wavelengths were in the 1.5 mu m range for all cases. >
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