应变硅Mach-Zenhder干涉仪中的Pockels效应研究

11th International Conference on Group IV Photonics (GFP) Pub Date : 2014-11-24 DOI:10.1109/GROUP4.2014.6961945

P. Damas, X. Le roux, D. Le Bourdais, E. Cassan, D. Marris-Morini, N. Izard, F. Maillard, T. Maroutian, P. Lecoeur, L. Vivien

{"title":"应变硅Mach-Zenhder干涉仪中的Pockels效应研究","authors":"P. Damas, X. Le roux, D. Le Bourdais, E. Cassan, D. Marris-Morini, N. Izard, F. Maillard, T. Maroutian, P. Lecoeur, L. Vivien","doi":"10.1109/GROUP4.2014.6961945","DOIUrl":null,"url":null,"abstract":"We report the study of the wavelength dependence in the NIR range (1.3 μm-1.63 μm), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from Xxxy(2) = 74 ± 25 pm/V to Xxxy(2) = 221 ±34 pm/V, at λ = 1300 nm and λ = 1630 nm respectively.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Pockels effect study in strained silicon Mach-Zenhder interferometer\",\"authors\":\"P. Damas, X. Le roux, D. Le Bourdais, E. Cassan, D. Marris-Morini, N. Izard, F. Maillard, T. Maroutian, P. Lecoeur, L. Vivien\",\"doi\":\"10.1109/GROUP4.2014.6961945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the study of the wavelength dependence in the NIR range (1.3 μm-1.63 μm), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from Xxxy(2) = 74 ± 25 pm/V to Xxxy(2) = 221 ±34 pm/V, at λ = 1300 nm and λ = 1630 nm respectively.\",\"PeriodicalId\":364162,\"journal\":{\"name\":\"11th International Conference on Group IV Photonics (GFP)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2014.6961945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2014.6961945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文报道了应变硅中Pockels效应在近红外波段(1.3 μm-1.63 μm)的波长依赖关系。在λ = 1300 nm和λ = 1630 nm处，测量到的二阶非线性光学磁化率分别为Xxxy(2) = 74±25 pm/V和Xxxy(2) = 221±34 pm/V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Pockels effect study in strained silicon Mach-Zenhder interferometer

We report the study of the wavelength dependence in the NIR range (1.3 μm-1.63 μm), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from X_xxy⁽²⁾ = 74 ± 25 pm/V to X_xxy⁽²⁾ = 221 ±34 pm/V, at λ = 1300 nm and λ = 1630 nm respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

11th International Conference on Group IV Photonics (GFP)

自引率

0.00%

发文量