采用先进(Mg,Zr)共掺杂AlN薄膜的压电微能量收集器

2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2015-03-02 DOI:10.1109/MEMSYS.2015.7051154

L. Minh, M. Hara, H. Kuwano, T. Yokoyama, T. Nishihara, M. Ueda

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引用次数: 2

摘要

本文报道了一种新型掺杂AlN薄膜(Mg,Zr)AlN微能量收集器。通过在AlN晶体中共掺杂Mg和Zr， (Mg,Zr)AlN表现出巨大的压电性并保持低介电常数。(Mg,Zr)AlN的品质系数(FOM = e312/(ε0ε))高于常规PZT。13 at.%-(Mg,Zr)AlN的实验FOM高达16.7 GPa。微加工收割机的归一化功率密度高达3.72 mw .g . 2 cm-3。这一成果是目前水平的1.5倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film

We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e₃₁²/(ε₀ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g^-2.cm^-3. This achievement was 1.5-fold increase compared to state of the art.

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2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

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