{"title":"Pt-Ti/p-InGaAs/n-InP 异质结构的电特性分析","authors":"K. Jiao, A. J. Soltyka, W. Anderson, A. Katz","doi":"10.1109/ICIPRM.1990.203021","DOIUrl":null,"url":null,"abstract":"The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500 degrees C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures\",\"authors\":\"K. Jiao, A. J. Soltyka, W. Anderson, A. Katz\",\"doi\":\"10.1109/ICIPRM.1990.203021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500 degrees C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
利用深层瞬态光谱和 I-V-T 测量方法研究了在不同温度下退火的铂钛/钯砷化镓/氮化铟磷异质结构的电学特性，以评估铂钛欧姆接触和相应的快速热处理 (RTP) 温度对器件性能的影响。结果发现，在 500 摄氏度以上的温度下会诱发 0.89 eV 的新空穴陷阱电平，而在较低温度下则不会。钛的相互扩散被认为是造成这种空穴陷阱的原因。在所有样品中都观察到了活化能分别为 0.61、0.45、0.35 和 0.30 eV 的四个电子陷阱电平，据信它们是 InP 中的原生缺陷。I-V-T 测量结果表明，电流机制与 RTP 温度无关。
Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures
The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500 degrees C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.<>
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