The impact of gate length scaling on UTBOX FDSOI devices: The digital/analog performance of extension-less structures

In this paper we explore, from DC measurements, the impact of gate length scaling on the main digital/analog parameters of Ultra-Thin Buried Oxide (UTBOX) Fully Depleted Silicon-on-Insulator (FDSOI) devices at different temperatures. Standard junction reference devices are compared with the extension-less ones where the latter present superior characteristics for smaller device lengths such as improved DIBL, SS and IGIDL apart from the higher Ion/Ioff ratio, VEA and AV. The temperature tends to degrade all the device parameters although the extension-less structures show to be less susceptible to its influence.