在厚埋氧化物SOI上采用新设计的600v横向IGBT的0.8 /spl mu/m高压集成电路

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509469

K. Watabe, H. Akiyama, T. Terashima, S. Nobuto, M. Yamawaki, T. Hirao

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引用次数: 7

摘要

我们已经证明，在使用厚埋氧化物和薄SOI的情况下，所开发的工艺击穿电压高于600 V。实验和仿真结果表明，采用圆柱形结构的光源性能最好;在不增加导通电压的情况下，提高了锁存容限。此外，我们开发的工艺与现有的5 V, 0.8 /spl mu/m CMOS工艺完全兼容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.8 /spl mu/m high voltage IC using newly designed 600 V lateral IGBT on thick buried-oxide SOI

We have demonstrated that the developed process has a breakdown voltage of higher than 600 V with use of thick buried-oxide and thin SOI. From both experiments and simulations, the cylindrical structure in the LIGBTs shows the best performance; it improves the latch-up tolerance without the increase of on-state voltage. Moreover, the process we have developed is completely compatible with an existing 5 V, 0.8 /spl mu/m CMOS process.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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