Study on junction temperature measurement of SiC Schottky Barrier diode based on turn-on-delay time estimation

This paper proposes a novel method to derive the junction temperature of a Silicon Carbide Schottky Barrier Diode (SiC SBD) when it is in operation. There is a correlation between the switching waveforms and the temperature, due to the material parameters and the carrier vary with the temperature. Estimating the Turn-on-delay time as a temperature sensitive electrical parameter (TSEP), the chip temperature in operation can be evaluated. The experiment is based on signal loop — dealing with the output signal of the chip by the peripheral circuits, then putting it as the switching signal to the chip. Thus, each minimal turn-on-delay time — at nanosecond level — can be accumulated to be a time span at microsecond or second level and the value is averaged to evaluate the turn-on-delay time.