一种新的基于扩展写蝴蝶曲线的写入稳定性度量，用于SRAM单元在低电源电压下的成品率估计

2016 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2016-03-28 DOI:10.1109/ICMTS.2016.7476190

Hao Qiu, K. Takeuchi, T. Mizutani, T. Saraya, M. Kobayashi, T. Hiramoto

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引用次数: 2

摘要

提出了一种新型的扩展写蝴蝶曲线(BC)，并通过采用薄盒硅(SOTB)技术制作的器件-矩阵阵列测试元件组(DMA-TEG)进行了评估。在低电源电压(VDD)下良好的正态性以及与字线方法的良好相关性表明，扩展的写BC是低VDD下产量估计的良好候选。并与传统的写BC进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new write stability metric using extended write butterfly curve for yield estimation in SRAM cells at low supply voltage

A new extended write butterfly curve (BC) is proposed and evaluated through our device-matrix-array test-element-group (DMA-TEG) fabricated by Silicon-on-Thin-BOX (SOTB) technology. A good normality at low supply voltage (VDD), as well as good correlation with word-line method, demonstrates the extended write BC as a good candidate for yield estimation at low VDD. The comparison with conventional write BC is also discussed.

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2016 International Conference on Microelectronic Test Structures (ICMTS)

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