开发用于描述高速应用中als门行为的宏模型

W. John
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引用次数: 4

摘要

已经开发了用于描述als门行为的宏模型。结果表明,该模型能较好地描述门的静态和动态输入输出行为。引入的宏模型结构的一个主要优点是网络节点数量少。文中给出的实例表明,宏模型与整个栅极仿真得到的参考值吻合良好。一个广泛的发展计划在模型建设领域的公差行为的闸门有关V/sub / cc/和温度的影响。提出了一种应用于HCMOS和ACL技术的宏模型结构。
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Development of macromodels for description of ALS-gate-behaviour with respect to high-speed applications
Macromodels for the description of ALS-gate behavior have been developed. It is shown that such models describe the static and dynamic input and output behavior of a gate completely. A main advantage of the introduced macromodel structure is the low number of network nodes. The example presented here shows the good coincidence of the macromodel with the reference values obtained by simulation of the whole gate. An extensive development is planned in the area of model building for tolerance behavior of gates with respect to V/sub cc/ and temperature influence. An application of the presented macromodel structure is planned for HCMOS and ACL technologies.<>
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The best-case power-delay products for polysilicon-contacted bipolar-transistor gates. A theoretical study The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process Delay analysis for BiCMOS drivers Comparing techniques for fabrication polysilicon contacted emitter bipolar transistors Thin base formation by double diffused polysilicon technology
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