用光致发光光谱法标定4H-SiC供体掺杂

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.570944

I. Ivanov, C. Hallin, A. Henry, O. Kordina, E. Janzén

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引用次数: 0

摘要

本征发光线和杂质相关发光线的相对强度反映了杂质浓度。提出了一种校正4H-SiC中氮供体杂质的方法。该校准方法适用于10/sup 14/ cm/sup -3/至3.10/sup 16/ cm/sup -3/的n型掺杂范围。在此水平以上，自由激子相关的发射是不可观察到的，低于此水平时，应注意材料的补偿。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Donor doping calibration in 4H-SiC using photoluminescence spectroscopy

The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 10/sup 14/ cm/sup -3/ to 3.10/sup 16/ cm/sup -3/. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted.

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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