K. Kikuchi, M. Takamiya, Y. Kudoh, K. Soejima, H. Honda, M. Mizuno, S. Yamamichi
{"title":"基于脉冲周期反向电镀和光敏树脂的封装工艺多层5-/spl μ /m厚铜布线技术","authors":"K. Kikuchi, M. Takamiya, Y. Kudoh, K. Soejima, H. Honda, M. Mizuno, S. Yamamichi","doi":"10.1109/IITC.2003.1219750","DOIUrl":null,"url":null,"abstract":"A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology has been developed for low resistance power supply wirings in high-speed ULSIs. A thick Cu wiring fabricated by pulse periodic reverse electroplating achieves the good thickness uniformity without CMP process. A photosensitive resin as interlayer dielectric eliminates dry etching steps. Three layers of thick Cu wirings have been successfully fabricated on the top of a 0.13-/spl mu/m CMOS ULSI with three layers of 0.5 /spl mu/m-thick Al wiring. The total thick Cu wiring resistance is confirmed to be five times as small as that of the conventional two layers of 0.5-/spl mu/m-thick Al wirings. This simple technology is suitable for future low-cost ULSI global wirings.","PeriodicalId":212619,"journal":{"name":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology with pulse periodic reverse electroplating and photosensitive resin\",\"authors\":\"K. Kikuchi, M. Takamiya, Y. Kudoh, K. Soejima, H. Honda, M. Mizuno, S. Yamamichi\",\"doi\":\"10.1109/IITC.2003.1219750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology has been developed for low resistance power supply wirings in high-speed ULSIs. A thick Cu wiring fabricated by pulse periodic reverse electroplating achieves the good thickness uniformity without CMP process. A photosensitive resin as interlayer dielectric eliminates dry etching steps. Three layers of thick Cu wirings have been successfully fabricated on the top of a 0.13-/spl mu/m CMOS ULSI with three layers of 0.5 /spl mu/m-thick Al wiring. The total thick Cu wiring resistance is confirmed to be five times as small as that of the conventional two layers of 0.5-/spl mu/m-thick Al wirings. This simple technology is suitable for future low-cost ULSI global wirings.\",\"PeriodicalId\":212619,\"journal\":{\"name\":\"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2003.1219750\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2003.1219750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology with pulse periodic reverse electroplating and photosensitive resin
A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology has been developed for low resistance power supply wirings in high-speed ULSIs. A thick Cu wiring fabricated by pulse periodic reverse electroplating achieves the good thickness uniformity without CMP process. A photosensitive resin as interlayer dielectric eliminates dry etching steps. Three layers of thick Cu wirings have been successfully fabricated on the top of a 0.13-/spl mu/m CMOS ULSI with three layers of 0.5 /spl mu/m-thick Al wiring. The total thick Cu wiring resistance is confirmed to be five times as small as that of the conventional two layers of 0.5-/spl mu/m-thick Al wirings. This simple technology is suitable for future low-cost ULSI global wirings.
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