多晶硅栅极单电子晶体管的电荷粒度

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) Pub Date : 2012-03-06 DOI:10.1109/ULIS.2012.6193364

D. Kotekar-Patil, Stefan Jauerneck, M. Ruoff, D. Wharam, D. Kern, X. Jehl, R. Wacquez, M. Sanquer

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摘要

采用先进的CMOS技术制备的多晶硅栅极单电子晶体管的低温电子输运测量不仅显示出清晰的库仑封锁行为，而且在非线性状态下显示出大量的附加电导波动。通过与模拟的比较，这些特性定量地归因于多晶硅栅极中离散带电岛的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Charge granularity in single electron transistors with polysilicon gates

Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.

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2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

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