3.6kV/400A SiC Austin SuperMOS串并联设计

Liqi Zhang, Zhicheng Guo, Soumik Sen, Chen Chen, A. Q. Huang
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引用次数: 0

摘要

基于新型低压器件串并联方法,研制了一种3.6kV/400A SiC半桥智能功率模块(IPM)。在IPM中集成了24个1200V SiC mosfet,以及高隔离电压栅极电源,栅极驱动器和过流保护。本文提出并分析了一种新的串并联方法,该方法既能保证串联器件的动态电压共享量,又能保证并联支路之间的电流共享。实验结果表明,所研制的高功率IPM具有优越的性能。
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A Novel Series-Parallel Design of The 3.6kV/400A SiC Austin SuperMOS
A 3.6kV/400A SiC half-bridge intelligent power module (IPM) is developed based on a novel series-parallel approach of lower voltage devices. Twenty-four 1200V SiC MOSFETs are integrated in the IPM together with a high isolation voltage gate power supply, gate driver and overcurrent protection. This paper proposes and analyzes the novel series-parallel approach which guarantees dynamic voltage sharing amount series connected devices and current sharing among paralleled branches. Experimental results are included to demonstrate the superior performance of the developed high power IPM.
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