{"title":"深亚微米nmosfet中热载子诱导漏极电流衰减的新观察","authors":"J.F. Chen, C. Tsao","doi":"10.1109/IPFA.2002.1025607","DOIUrl":null,"url":null,"abstract":"Hot-carrier induced drain current degradation in 0.18 /spl mu/m nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.","PeriodicalId":328714,"journal":{"name":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs\",\"authors\":\"J.F. Chen, C. Tsao\",\"doi\":\"10.1109/IPFA.2002.1025607\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot-carrier induced drain current degradation in 0.18 /spl mu/m nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.\",\"PeriodicalId\":328714,\"journal\":{\"name\":\"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2002.1025607\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2002.1025607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs
Hot-carrier induced drain current degradation in 0.18 /spl mu/m nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.
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