K. Kohiro, K. Kainosho, H. Shimakura, T. Fukui, O. Oda
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Growth of large diameter InP single crystals by the phosphorus vapor controlled LEC method
Large-diameter InP Single crystals (60 mm and 3 in) have been grown by a phosphorus-vapor-controlled liquid-encapsulated-Czochralski (PC-LEC) method in which the pulling rod is not sealed by an encapsulant but by a mechanical seal. The advantage of this technology is that the crystal growth can be performed in an industrial setting because of the ease of instrumentation. Both S-doped and Fe-doped single crystals have been grown. In the case of S-doped crystals, the dislocation free area was greatly increased compared with the conventional LEC method. A 3-in Fe-doped InP crystal with a dislocation density lower than 5*10/sup 4/ cm/sup -2/ was also grown.<>
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