{"title":"基于金属有机化学气相沉积法生长的InAsSb应变层的多级红外发射体","authors":"R. M. Biefeld, A. Allerman, S. Kurtz, K. Baucom","doi":"10.1109/COMMAD.1998.791582","DOIUrl":null,"url":null,"abstract":"We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 /spl mu/m and 80 K and 0.1 mW at 4.3 /spl mu/m and 300 K. A multistage, 3.8-3.9 /spl mu/m laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition\",\"authors\":\"R. M. Biefeld, A. Allerman, S. Kurtz, K. Baucom\",\"doi\":\"10.1109/COMMAD.1998.791582\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 /spl mu/m and 80 K and 0.1 mW at 4.3 /spl mu/m and 300 K. A multistage, 3.8-3.9 /spl mu/m laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791582\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition
We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 /spl mu/m and 80 K and 0.1 mW at 4.3 /spl mu/m and 300 K. A multistage, 3.8-3.9 /spl mu/m laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.