脉冲电子束和离子束对SiC薄膜的表面改性

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.571092

S. Korenev, J. Huran, A. Kobzev

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摘要

本文报道了用脉冲电子束和离子束对碳化硅薄膜进行表面改性的实验研究结果。在实验中，我们使用电子和离子束，其参数如下:动能200-400 keV，脉冲持续时间300 ns，电子束电流100-300 A，离子1-20 A。结果由RBS, ERD(弹性后坐力检测)和IR光谱得到。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Surface modification of SiC thin films by pulsed electron and ion beams

The results of experimental investigation of surface modification of silicon carbide thin films by pulsed electron and ion beams are presented in this report. For experiments we use electron and ion beams with following parameters: kinetic energy 200-400 keV, pulse duration 300 ns, beam current for electrons 100-300 A, for ions 1-20 A. The presented results were obtained from RBS, ERD (elastic recoil detection) and IR spectroscopy.

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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