锡纳米线晶格变形在纳米互连技术中的应用

H. Shin, J. Song, Jin Yu
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引用次数: 1

摘要

纳米互连技术有望在不久的将来部分取代电子封装的凹凸焊技术。金属纳米线是电互连材料的候选材料之一。本研究选择Sn作为电子封装中众所周知的互连材料,将其应用于纳米互连技术。由于锡NWs的物理性质对互连应用非常重要,我们已经报道了单晶锡NWs的熔化行为和晶格参数的尺寸依赖性。在本研究中,研究了NW微观结构和用于Sn NWs生长的模板类型对晶格参数的影响。结果表明,根据微观结构和模板种类的不同,Sn - NWs单晶沿纵向拉伸率可达0.64%。当NW组织依次为单晶、粒状和竹状组织时,纳米线延伸率逐渐降低。
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Lattice deformation of Sn nanowires for the application to nano-interconnection technology
Nano-interconnection technology is expected to replace some part of solder bump technology of electronic packaging in near future. Metallic nanowires (NWs) are one of the candidates for the electrical interconnection materials. In this study, as a well-known material for the interconnection in the electronic packaging, Sn was selected for the application to nano-interconnection technology. Since the physical properties of Sn NWs are important for the interconnection applications, we have already reported the size-dependency of melting behaviors and lattice parameters of single crystalline Sn NWs. In this study, the effects of the NW microstructure and the kinds of templates, which were used for the growth of Sn NWs, on the lattice parameter were investigated. Results showed that the single crystalline Sn NWs were elongated along the longitudinal direction up to 0.64 % depending upon their microstructures and kinds of the templates. The nanowire elongation was gradually reduced when the NW microstructure were single crystalline, granular, and bamboolike structures, in sequence.
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