从AM4Q8莫特绝缘体的电阻开关机制到莫特存储器

2015 IEEE International Memory Workshop (IMW) Pub Date : 2015-05-17 DOI:10.1109/IMW.2015.7150287

J. Tranchant, E. Janod, B. Corraze, M. Besland, L. Cario

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引用次数: 0

摘要

电脉冲在Mott绝缘子AM4Q8 (A = Ga, Ge)上的应用M = V, Nb, Ta, Mo;Q = S, Se)引起了一种新的电阻开关现象。出现在几kV/cm的阈值电场之上，这种挥发性跃迁在更高的电场中稳定为非挥发性RS。一种高电压的短多脉冲与低电压的长单脉冲交替的脉冲协议能够控制晶体和薄膜中的可逆RS。在GaV4S8小型化器件上获得的循环性能证明了这些化合物对Mott存储器应用的兴趣。

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From Resistive Switching Mechanisms in AM4Q8 Mott Insulators to Mott Memories

The application of electrical pulses on Mott insulators AM4Q8 (A = Ga, Ge ; M = V, Nb, Ta, Mo; Q = S, Se) induces a new phenomenon of resistive switching (RS). Appearing above threshold electric fields of a few kV/cm, this volatile transition stabilizes into a non volatile RS for higher electric fields. A pulse protocol alternating short multi-pulses of high voltage with long single pulses of low voltage enables to control this reversible RS in crystals and thin films. The resulting cycling performances obtained on GaV4S8 miniaturized devices demonstrate the interest of these compounds towards Mott memory applications.

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2015 IEEE International Memory Workshop (IMW)

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