静电放电与热载子效应的相互作用及其对保护电路可靠性的影响研究

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) Pub Date : 2002-11-07 DOI:10.1109/IPFA.2002.1025616

I. Manna, P. Tan, Y. Tan, K. Lo

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摘要

在先进的深亚微米技术中，研究了非破坏性ESD事件对热载流子降解参数的影响。此外，还研究了两种ESD保护策略(衬底偏置NMOS和源注入技术)，从ESD预应力后的热载流子可靠性的角度来看，它们具有不平等的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A study of interaction between electrostatic discharge and hot carrier effect and its effect on protection circuit reliability

Studied the effect of non-destructive ESD events on hot carrier degradation parameters in an advanced deep submicron technology. Also investigated are two ESD protection strategies (substrate-biased NMOS and source injection technique) and they are shown to have unequal performance from the standpoint of hot-carrier reliability after ESD pre-stress.

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Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

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