晶圆晶体管表征到750 GHz -方法，结果和陷阱

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8550897

Dylan F. Williams, J. Cheron, B. Jamroz, R. Chamberlin

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引用次数: 2

摘要

我们回顾了美国国家标准与技术研究所开发的用于亚毫米波的晶圆晶体管表征和模型参数提取的方法，并将它们与用于低频的更常见方法进行了比较。我们讨论了准确性的重要改进，估计程序不确定性的方法，以及进一步改进这些方法的最新研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On-Wafer Transistor Characterization to 750 GHz – the Approach, Results, and Pitfalls

We review approaches developed at the National Institute of Standards and Technology for on-wafer transistor characterization and model parameter extraction at submillimeter wavelengths and compare them to more common approaches developed for use at lower frequencies. We discuss important improvements in accuracy, approaches to estimating the uncertainty of the procedure, and recent research on further improving these methods.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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