用于5G ka波段波束形成收发器的有源矢量调制器的低噪声IQ生成

B. Mesgari, H. Zimmermann
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摘要

本文研究了一种紧凑、低噪声的相位差和正交信号发生器。所提出的电路利用一对互感器来产生90°相移,从而在I和Q路径上获得相同的电压增益。同时,它与RC-CR结构形成鲜明对比,RC-CR结构无法同时通过适当的90°相移来实现IQ路径的相同增益。在130 nm SiGe-BiCMOS技术下的仿真结果表明,在28 GHz中心频率附近实现了1.54 GHz的3db带宽。在低中频接收器中采用所提出的结构作为移相块的一部分,表明所需信号的电压增益为30 dB,而图像信号在22.275 GHz处提供40 dB抑制。当接收器从2V电源中消耗8ma时,NF和S11在整个感兴趣的频段内分别小于3.5 dB和-17dB。相位误差小于5°,增益变化误差为0.3$\sim$0.5 dB。接收器链其余部分的输入IP3约为-27dBm。
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Low Noise IQ Generation Employed in an Active Vector Modulator for 5G Ka-Band Beam Forming Transceivers
This paper investigates a compact, low noise differential in-phase (I) and quadrature signal (Q) generator. The proposed circuit utilizes a pair of mutual inductors to generate 90° phase shift which results in the same voltage gain for both I and Q paths. while it is in contrast with an RC-CR structure where the same gain for IQ paths cannot be achieved with a proper 90° phase shift simultaneously. The simulation results in a 130 nm SiGe-BiCMOS technology, indicate that a 3-dB bandwidth of 1.54 GHz around 28 GHz center frequency is achieved. Employing the proposed structure in a 1ow-IF receiver as part of the phase-shifting block has indicated a voltage gain of 30 dB for the desired signal while 40 dB rejection is provided at 22.275 GHz for the image signal. NF and S11 are less than 3.5 dB and -17dB, respectively, for the entire band of interest while the receiver consumes 8 mA from a 2V power supply. The phase error is less than 5° and the gain variation error is 0.3$\sim$0.5 dB. The input IP3 for the rest of the receiver chain is about -27dBm.
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