A. Kamgar, R. Knoell, F. Baiocchi, K. Orlowsky, K. Cheung, R. Liu
{"title":"铝熔化对二极管完整性的影响","authors":"A. Kamgar, R. Knoell, F. Baiocchi, K. Orlowsky, K. Cheung, R. Liu","doi":"10.1109/VMIC.1989.78022","DOIUrl":null,"url":null,"abstract":"The integrity of Al/barrier/CoSi/sub 2/ junctions subjected to Al melting was studied. Melting was accomplished by irradiating Si wafers in a rapid thermal anneal system. Three types of barrier were studied: TiN, W:Ti, and a bilayer of W:Ti/TiN. Junction leakage measurements indicated that the W:Ti/TiN bilayer was superior to the other two and that it withstood temperatures at least 60 degrees C higher than the Al melting temperature for one second or less. Rutherford backscattering, X-ray diffraction, and etchback experiments were performed to determine the extent of interaction between the various layers after the melt. The authors found that for the W:Ti barrier, upon melting of Al, W reacted readily with Al and Si, forming the ternary alloy, W(Al,Si)/sub 2/, and possibly other phases including Co as a constituent. TiN on the other hand effectively prevented the reaction of Al and W with Co and Si.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Al melting on diode integrity\",\"authors\":\"A. Kamgar, R. Knoell, F. Baiocchi, K. Orlowsky, K. Cheung, R. Liu\",\"doi\":\"10.1109/VMIC.1989.78022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The integrity of Al/barrier/CoSi/sub 2/ junctions subjected to Al melting was studied. Melting was accomplished by irradiating Si wafers in a rapid thermal anneal system. Three types of barrier were studied: TiN, W:Ti, and a bilayer of W:Ti/TiN. Junction leakage measurements indicated that the W:Ti/TiN bilayer was superior to the other two and that it withstood temperatures at least 60 degrees C higher than the Al melting temperature for one second or less. Rutherford backscattering, X-ray diffraction, and etchback experiments were performed to determine the extent of interaction between the various layers after the melt. The authors found that for the W:Ti barrier, upon melting of Al, W reacted readily with Al and Si, forming the ternary alloy, W(Al,Si)/sub 2/, and possibly other phases including Co as a constituent. TiN on the other hand effectively prevented the reaction of Al and W with Co and Si.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The integrity of Al/barrier/CoSi/sub 2/ junctions subjected to Al melting was studied. Melting was accomplished by irradiating Si wafers in a rapid thermal anneal system. Three types of barrier were studied: TiN, W:Ti, and a bilayer of W:Ti/TiN. Junction leakage measurements indicated that the W:Ti/TiN bilayer was superior to the other two and that it withstood temperatures at least 60 degrees C higher than the Al melting temperature for one second or less. Rutherford backscattering, X-ray diffraction, and etchback experiments were performed to determine the extent of interaction between the various layers after the melt. The authors found that for the W:Ti barrier, upon melting of Al, W reacted readily with Al and Si, forming the ternary alloy, W(Al,Si)/sub 2/, and possibly other phases including Co as a constituent. TiN on the other hand effectively prevented the reaction of Al and W with Co and Si.<>
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