Y. Miura, K. Takemoto, T. Iwasaki, N. Yamabayashi, M. Kaji, S. Murai, K. Tada, S. Akai
{"title":"在2英寸直径的InP衬底上生长高纯度和高均匀性的InGaAs/InP外延层","authors":"Y. Miura, K. Takemoto, T. Iwasaki, N. Yamabayashi, M. Kaji, S. Murai, K. Tada, S. Akai","doi":"10.1109/ICIPRM.1990.202995","DOIUrl":null,"url":null,"abstract":"An epitaxial InP/InGaAs/InP structure was grown on 2-in-diameter InP substrates by the chloride vapor-phase epitaxy (VPE) method. The undoped carrier concentration of both the InP and InGaAs layers was less than 1*10/sup 15/ cm/sup -3/. Hall mobility at 77 K was 85000 cm/sup 2//V-s. The variation of epi-layer thickness, carrier concentration and lattice mismatch across the wafer was less than 2%, 4% and 0.8%, respectively. The reproducibility of growth rate, carrier concentration, and lattice mismatch from run to run was less than 5%.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"VPE growth of high purity and high uniformity InGaAs/InP epitaxial layers on 2-inch diameter InP substrate\",\"authors\":\"Y. Miura, K. Takemoto, T. Iwasaki, N. Yamabayashi, M. Kaji, S. Murai, K. Tada, S. Akai\",\"doi\":\"10.1109/ICIPRM.1990.202995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An epitaxial InP/InGaAs/InP structure was grown on 2-in-diameter InP substrates by the chloride vapor-phase epitaxy (VPE) method. The undoped carrier concentration of both the InP and InGaAs layers was less than 1*10/sup 15/ cm/sup -3/. Hall mobility at 77 K was 85000 cm/sup 2//V-s. The variation of epi-layer thickness, carrier concentration and lattice mismatch across the wafer was less than 2%, 4% and 0.8%, respectively. The reproducibility of growth rate, carrier concentration, and lattice mismatch from run to run was less than 5%.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.202995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
VPE growth of high purity and high uniformity InGaAs/InP epitaxial layers on 2-inch diameter InP substrate
An epitaxial InP/InGaAs/InP structure was grown on 2-in-diameter InP substrates by the chloride vapor-phase epitaxy (VPE) method. The undoped carrier concentration of both the InP and InGaAs layers was less than 1*10/sup 15/ cm/sup -3/. Hall mobility at 77 K was 85000 cm/sup 2//V-s. The variation of epi-layer thickness, carrier concentration and lattice mismatch across the wafer was less than 2%, 4% and 0.8%, respectively. The reproducibility of growth rate, carrier concentration, and lattice mismatch from run to run was less than 5%.<>
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