{"title":"基于亚阈值斜率特性的全耗尽SOI mosfet结构参数无损提取","authors":"H. Ito, K. Asada","doi":"10.1109/COMMAD.1998.791605","DOIUrl":null,"url":null,"abstract":"In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Non-destructive extraction of structural parameters of fully-depleted SOI MOSFETs using subthreshold slope characteristics\",\"authors\":\"H. Ito, K. Asada\",\"doi\":\"10.1109/COMMAD.1998.791605\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791605\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文主要研究利用s因子特性无损提取FD SOI mosfet结构参数的方法。我们基于SOI MOSFET的一维模型开发了一个模拟器，用于分析其后门特性。该方法提取的参数与透射电镜观测得到的参数吻合较好。通过对拟合误差的分析来评价该方法的结果，并对其精度进行了讨论。
Non-destructive extraction of structural parameters of fully-depleted SOI MOSFETs using subthreshold slope characteristics
In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.
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