{"title":"用噪声测量技术快速测试电迁移抗扰度","authors":"J. Komori, Y. Takata, J. Mitsuhashi, N. Tsubouchi","doi":"10.1109/ICMTS.1990.161753","DOIUrl":null,"url":null,"abstract":"A quick wafer-level evaluation technique for electromigration immunity is proposed. Noise measurements (1/f, 1/f/sup 2/) are performed on a test pattern with stress gradients under high current density up to 2*10/sup 7/ A/cm/sup 2/. Each of the measurements is completed within a few minutes. The temperature of the interconnections (200 degrees C for a current density of 2*10/sup 7/ A/cm/sup 2/) is low enough to evaluate electromigration. The effectiveness of the proposed technique has been verified by observing that the current noise spectrum is closely related to the void formation.<<ETX>>","PeriodicalId":417292,"journal":{"name":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A fast testing of electromigration immunity using noise measurement technique\",\"authors\":\"J. Komori, Y. Takata, J. Mitsuhashi, N. Tsubouchi\",\"doi\":\"10.1109/ICMTS.1990.161753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A quick wafer-level evaluation technique for electromigration immunity is proposed. Noise measurements (1/f, 1/f/sup 2/) are performed on a test pattern with stress gradients under high current density up to 2*10/sup 7/ A/cm/sup 2/. Each of the measurements is completed within a few minutes. The temperature of the interconnections (200 degrees C for a current density of 2*10/sup 7/ A/cm/sup 2/) is low enough to evaluate electromigration. The effectiveness of the proposed technique has been verified by observing that the current noise spectrum is closely related to the void formation.<<ETX>>\",\"PeriodicalId\":417292,\"journal\":{\"name\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.161753\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.161753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
提出了一种晶圆级电迁移免疫快速评价技术。噪声测量(1/f, 1/f/sup 2/)在高电流密度下的应力梯度测试模式下进行，最高可达2*10/sup 7/ a /cm/sup 2/。每次测量都在几分钟内完成。互连的温度(200摄氏度的电流密度为2*10/sup 7/ a /cm/sup 2/)是低到足以评估电迁移。通过观察电流噪声谱与孔隙形成密切相关，验证了该技术的有效性
A fast testing of electromigration immunity using noise measurement technique
A quick wafer-level evaluation technique for electromigration immunity is proposed. Noise measurements (1/f, 1/f/sup 2/) are performed on a test pattern with stress gradients under high current density up to 2*10/sup 7/ A/cm/sup 2/. Each of the measurements is completed within a few minutes. The temperature of the interconnections (200 degrees C for a current density of 2*10/sup 7/ A/cm/sup 2/) is low enough to evaluate electromigration. The effectiveness of the proposed technique has been verified by observing that the current noise spectrum is closely related to the void formation.<>
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