点注入沟槽IGBT概念的实验论证

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147625

Elizabeth Buitrago, M. Antoniou, Nick Schneider, E. Bianda, Luca De-Michielis, C. Corvasce, F. Udrea

{"title":"点注入沟槽IGBT概念的实验论证","authors":"Elizabeth Buitrago, M. Antoniou, Nick Schneider, E. Bianda, Luca De-Michielis, C. Corvasce, F. Udrea","doi":"10.1109/ISPSD57135.2023.10147625","DOIUrl":null,"url":null,"abstract":"The point injection trench IGBT is a promising concept based on the narrowing of the mesa between active gate trenches. In this paper, multiple design variations of the point injection trench IGBT with a voltage rating of 1200 V are fabricated and experimentally investigated. It is shown that sub micron mesa widths are successfully processed and a broad design space of IGBT devices with competitive performance is spanned.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental Demonstration of Point-Injection Trench IGBT Concept\",\"authors\":\"Elizabeth Buitrago, M. Antoniou, Nick Schneider, E. Bianda, Luca De-Michielis, C. Corvasce, F. Udrea\",\"doi\":\"10.1109/ISPSD57135.2023.10147625\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The point injection trench IGBT is a promising concept based on the narrowing of the mesa between active gate trenches. In this paper, multiple design variations of the point injection trench IGBT with a voltage rating of 1200 V are fabricated and experimentally investigated. It is shown that sub micron mesa widths are successfully processed and a broad design space of IGBT devices with competitive performance is spanned.\",\"PeriodicalId\":344266,\"journal\":{\"name\":\"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD57135.2023.10147625\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147625","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

点注入沟槽IGBT是一个很有前途的概念，它基于有源栅极沟槽之间的平台变窄。本文制作了额定电压为1200v的点注入沟槽IGBT的多种设计方案，并进行了实验研究。结果表明，该方法成功地加工了亚微米台面宽度，为具有竞争性能的IGBT器件提供了广阔的设计空间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Experimental Demonstration of Point-Injection Trench IGBT Concept

The point injection trench IGBT is a promising concept based on the narrowing of the mesa between active gate trenches. In this paper, multiple design variations of the point injection trench IGBT with a voltage rating of 1200 V are fabricated and experimentally investigated. It is shown that sub micron mesa widths are successfully processed and a broad design space of IGBT devices with competitive performance is spanned.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

自引率

0.00%

发文量