亚波长/sup TM/设计的硅级物理验证

F. Chang, Melissa Kwok, K. Rachlin, R. Pack
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引用次数: 1

摘要

在本文中,我们表明,使用亚波长掩模设计来提高IC性能和良率,对传统的深亚微米ECAD物理验证工具提出了新的挑战。我们展示了对新方法的需求,并提出了两种用于亚波长设计的硅级物理验证的工具。幸运的是,这些工具可以在当前的物理验证设计流程中工作。
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Silicon-level physical verification of SubWavelength/sup TM/ designs
In this paper, we show that the use of SubWavelength mask design for improved IC performance and yield presents new challenges for traditional deep submicron ECAD physical verification tools. We demonstrate the need for new approaches and propose two tools for the silicon-level physical verification of SubWavelength designs. Fortunately, these tools work within current physical verification design flows.
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