A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline-MoS2FET with Resistive Switching Behavior in Neuromorphic Computing

For the first time, a surface potential- and physics-based compact model for two dimensional (2D) polycrystalline-molybdenum disulfide (MoS2) field effect transistors (FETs) with resistive switching (RS) behavior is developed and verified by experimental data. This model is incorporated with the theories of thermal activation transport, grain boundary (GB) barrier and space charge limited current (SCLC). Based on the GB induced disorders, the grain size, low temperature and high electrical field dependent characteristics are studied. The predicted transfer and output characteristics have excellent quantitative agreement with experimental results. Furthermore, considering the hopping process induced defect- (i.e., sulfur vacancy) redistribution, the GB (e.g., intersecting or bisecting GB) dependent resistive switching behavior is physically investigated. Finally, this model is implemented to simulate the synaptic activity such as short-term/long-term plasticity, which indicates the possibility of using 2D-FETs for neuromorphic computing applications.