Gwihyun Kim, Sanghyun Lee, Seungwoo Hong, S. Baik, Hideki Hori, D. Ahn
{"title":"用于多级电阻低电压编程的PRAM可调电压依赖开关特性","authors":"Gwihyun Kim, Sanghyun Lee, Seungwoo Hong, S. Baik, Hideki Hori, D. Ahn","doi":"10.1109/NVMTS.2014.7060862","DOIUrl":null,"url":null,"abstract":"Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method is systematically proposed to demonstrate some principles of low voltage MLC programming. A microstructural model is also introduced to provide a comprehensive explanation of resistance swiching for various voltage pulses.","PeriodicalId":275170,"journal":{"name":"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances\",\"authors\":\"Gwihyun Kim, Sanghyun Lee, Seungwoo Hong, S. Baik, Hideki Hori, D. Ahn\",\"doi\":\"10.1109/NVMTS.2014.7060862\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method is systematically proposed to demonstrate some principles of low voltage MLC programming. A microstructural model is also introduced to provide a comprehensive explanation of resistance swiching for various voltage pulses.\",\"PeriodicalId\":275170,\"journal\":{\"name\":\"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NVMTS.2014.7060862\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS.2014.7060862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances
Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method is systematically proposed to demonstrate some principles of low voltage MLC programming. A microstructural model is also introduced to provide a comprehensive explanation of resistance swiching for various voltage pulses.
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