高纵横比硅蚀刻技术及其应用

Dacleng Zhang, J. Wan, G. Yan, Ting Li, D. Tian, Ke-Qiang Deng
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引用次数: 1

摘要

体硅微加工已成为微机电系统技术的研究热点。这主要归功于高纵横比硅蚀刻技术的突破。本文提出了一种在具有处理气体开关功能的ICP系统中,利用氟基化学物质SF/sub 6/和C/sub 4/F/sub 8/进行高纵横比硅刻蚀的新方法。实验结果表明,该工艺可以满足硅微加工的大部分要求。以干刻蚀释放工艺和微硅模型的制备为例说明了该技术的应用。
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High aspect ratio Si etching technique and application
Bulk silicon micromachining is becoming a hot topic in MEMS technology. This is mainly attributed to the breakthrough of high aspect ratio silicon etching. This article provides a new method of high aspect ratio silicon etching using fluorine based chemistries, SF/sub 6/ and C/sub 4/F/sub 8/, in an ICP system with a function of processing gases switching. The experiments demonstrate that the process results can meet most demands in bulk silicon micromachining processes. Two examples of a dry etching release process and fabrication of micro-silicon model are given to show the application of this technique.
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