N. Takahashi, N. Senba, Y. Shimada, I. Morizaki, K. Tokuno
{"title":"三维存储器模块","authors":"N. Takahashi, N. Senba, Y. Shimada, I. Morizaki, K. Tokuno","doi":"10.1109/ECTC.1996.517381","DOIUrl":null,"url":null,"abstract":"Demand has recently increased for high packaging density and memory capacity of memory modules for electronic equipment. Our new 3-Dimensional Memory (3DM) Module satisfies this demand. This module has almost the same size as single memory packages (TSOPs: 17.4/spl times/9.22/spl times/1.2 mm) currently being used, and a package density 4 times as large. Electrical performance is better than that of TSOPs because the length of its wires is about half that of TSOP's wires. Moreover, the cost to fabricate this module is low. This paper reports the module's characteristics and fabrication process. The design concept is that next-generation memory devices will be produced by casing current mass-produced memory devices.","PeriodicalId":143519,"journal":{"name":"1996 Proceedings 46th Electronic Components and Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"3-dimensional memory module\",\"authors\":\"N. Takahashi, N. Senba, Y. Shimada, I. Morizaki, K. Tokuno\",\"doi\":\"10.1109/ECTC.1996.517381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Demand has recently increased for high packaging density and memory capacity of memory modules for electronic equipment. Our new 3-Dimensional Memory (3DM) Module satisfies this demand. This module has almost the same size as single memory packages (TSOPs: 17.4/spl times/9.22/spl times/1.2 mm) currently being used, and a package density 4 times as large. Electrical performance is better than that of TSOPs because the length of its wires is about half that of TSOP's wires. Moreover, the cost to fabricate this module is low. This paper reports the module's characteristics and fabrication process. The design concept is that next-generation memory devices will be produced by casing current mass-produced memory devices.\",\"PeriodicalId\":143519,\"journal\":{\"name\":\"1996 Proceedings 46th Electronic Components and Technology Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Proceedings 46th Electronic Components and Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.1996.517381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Proceedings 46th Electronic Components and Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1996.517381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Demand has recently increased for high packaging density and memory capacity of memory modules for electronic equipment. Our new 3-Dimensional Memory (3DM) Module satisfies this demand. This module has almost the same size as single memory packages (TSOPs: 17.4/spl times/9.22/spl times/1.2 mm) currently being used, and a package density 4 times as large. Electrical performance is better than that of TSOPs because the length of its wires is about half that of TSOP's wires. Moreover, the cost to fabricate this module is low. This paper reports the module's characteristics and fabrication process. The design concept is that next-generation memory devices will be produced by casing current mass-produced memory devices.