{"title":"6-18GHz 13W无功匹配GaN功率放大器MMIC","authors":"H. Tao, W. Hong, Bin Zhang","doi":"10.23919/EUMIC.2017.8230732","DOIUrl":null,"url":null,"abstract":"The design and performance of a compact 6–18GHz power amplifier MMIC utilizing 0.2 pm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. An output power of 41.4 dBm to 43.3 dBm (average 42.3dBm) with over 16 dB power gain and a power added efficiency (PAE) of 21% to 35% over the band of 6–18 GHz under a drain voltage of 28 V in CW mode have been achieved. The chip size is compact with the size of 2.6∗3.6 mm2 and it delivers an average output power density 1.83 W/mm2 over the chip area. The thermal resistance is 1.55 T7W measured in CW mode.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"6–18GHz 13W reactive matched GaN power amplifier MMIC\",\"authors\":\"H. Tao, W. Hong, Bin Zhang\",\"doi\":\"10.23919/EUMIC.2017.8230732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and performance of a compact 6–18GHz power amplifier MMIC utilizing 0.2 pm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. An output power of 41.4 dBm to 43.3 dBm (average 42.3dBm) with over 16 dB power gain and a power added efficiency (PAE) of 21% to 35% over the band of 6–18 GHz under a drain voltage of 28 V in CW mode have been achieved. The chip size is compact with the size of 2.6∗3.6 mm2 and it delivers an average output power density 1.83 W/mm2 over the chip area. The thermal resistance is 1.55 T7W measured in CW mode.\",\"PeriodicalId\":120932,\"journal\":{\"name\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2017.8230732\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
6–18GHz 13W reactive matched GaN power amplifier MMIC
The design and performance of a compact 6–18GHz power amplifier MMIC utilizing 0.2 pm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. An output power of 41.4 dBm to 43.3 dBm (average 42.3dBm) with over 16 dB power gain and a power added efficiency (PAE) of 21% to 35% over the band of 6–18 GHz under a drain voltage of 28 V in CW mode have been achieved. The chip size is compact with the size of 2.6∗3.6 mm2 and it delivers an average output power density 1.83 W/mm2 over the chip area. The thermal resistance is 1.55 T7W measured in CW mode.
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