Low temperature plasma amorphous carbon encapsulation for reliable multilevel interconnections-with applications to wafer scale multichip packaging

The possibility of using amorphous carbon as an encapsulant for integrated circuits is investigated. As this is a low-temperature plasma-deposited carbon film, low stresses result. This reduces the possibility of bond wire breakages and stress on the underlying film. Its low-temperature deposition, chemical inactivity, highly electrical insulating properties, and imperviousness to the passage of contaminating gases, liquids, and ions make it a suitable encapsulant for circuits. These properties also make it a potential replacement for silicon nitride. The possibility of using amorphous carbon as a wire encapsulant at interconnect level is also explored.<>