用于功率器件的硅基GaN hemt

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404398

R. Escoffier, A. Torres, M. Fayolle-Lecocq, C. Buj-Dufournet, E. Morvan, M. Charles, M. Poisson

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引用次数: 2

摘要

为了研制高电压、大电流、高温的HEMT晶体管，我们研究了一种基于薄Al2O3的隔离栅。TCAD模拟已经被用来解释异常的C(V)结果取决于栅极下正电荷的密度和局域化。我们发现并解释了Al2O3界面降解与电特性之间的关系。

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GaN HEMTs on silicon for power devices

In order to develop high voltage high current and high temperature HEMT transistors, we have studied an isolated gate based on a thin Al2O3. TCAD simulations have been used to explain abnormal C(V) results depending on the density and localization of positive charges under the gate. We have found and explained the dependence between degradation of Al2O3 interface and electrical characteristics.

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2012 IEEE International SOI Conference (SOI)

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