静电放电引起的自旋阀记录磁头基线爆裂

Yong Shen, R. Leung, J.Z.F. Sun
{"title":"静电放电引起的自旋阀记录磁头基线爆裂","authors":"Yong Shen, R. Leung, J.Z.F. Sun","doi":"10.1109/EOSESD.2000.890100","DOIUrl":null,"url":null,"abstract":"We report a novel mechanism of baseline popping (BLP) of spin-valve (SV) magnetic recording heads induced by machine model (MM) ESD, which is characterized by short transient time (10-20 ns) and high peak current (25-35 mA). Energy required for the phenomenon is just 0.2-0.3 nJ which is significantly less than that required for pinned layer reversal induced by human body model (HBM) ESD (Takahashi et al., 1998). Our data shows that this magnetic instability is caused by a change in the magnetization state of the permanent magnetic layer near track edges and can be eliminated by magnetic field re-initialization.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Baseline popping of spin-valve recording heads induced by ESD\",\"authors\":\"Yong Shen, R. Leung, J.Z.F. Sun\",\"doi\":\"10.1109/EOSESD.2000.890100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a novel mechanism of baseline popping (BLP) of spin-valve (SV) magnetic recording heads induced by machine model (MM) ESD, which is characterized by short transient time (10-20 ns) and high peak current (25-35 mA). Energy required for the phenomenon is just 0.2-0.3 nJ which is significantly less than that required for pinned layer reversal induced by human body model (HBM) ESD (Takahashi et al., 1998). Our data shows that this magnetic instability is caused by a change in the magnetization state of the permanent magnetic layer near track edges and can be eliminated by magnetic field re-initialization.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2000.890100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

本文报道了一种由机器模型ESD引起的自旋阀(SV)磁记录磁头基线爆裂(BLP)的新机制,该机制具有瞬态时间短(10-20 ns)和峰值电流高(25-35 mA)的特点。该现象所需的能量仅为0.2-0.3 nJ,明显低于人体模型(HBM) ESD诱导的钉住层反转所需的能量(Takahashi et al., 1998)。我们的数据表明,这种磁不稳定性是由轨道边缘附近永磁层磁化状态的变化引起的,可以通过磁场重新初始化来消除。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Baseline popping of spin-valve recording heads induced by ESD
We report a novel mechanism of baseline popping (BLP) of spin-valve (SV) magnetic recording heads induced by machine model (MM) ESD, which is characterized by short transient time (10-20 ns) and high peak current (25-35 mA). Energy required for the phenomenon is just 0.2-0.3 nJ which is significantly less than that required for pinned layer reversal induced by human body model (HBM) ESD (Takahashi et al., 1998). Our data shows that this magnetic instability is caused by a change in the magnetization state of the permanent magnetic layer near track edges and can be eliminated by magnetic field re-initialization.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
ESD damage thresholds: history and prognosis [magnetic heads] Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors A study of static-dissipative tweezers for handling giant magneto-resistive recording heads A study of the mechanisms for ESD damage to reticles Floating gate EEPROM as EOS indicators during wafer-level GMR processing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1