基于盒状Ge轮廓的pnp Si/SiGeC HBTs的实验与仿真研究

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430949

J. Duvernay, G. Borot, P. Chevalier, D. Dutartre, R. Pantel, L. Rubaldo, T. Schwartzmann, B. Vandelle, A. Chantre

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引用次数: 2

摘要

在本文中，我们描述了使用自对准选择性外延发射极/基极结构的pnp SiGeC HBT的开发。详细介绍了器件物理特性和价带势垒对pnp hbt的影响。特别描述了限制其负面影响所需的Ge和杂质剖面优化。讨论了装置的静态和动态特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An experimental and simulation study of pnp Si/SiGeC HBTs using box-like Ge profiles

In this paper, we describe the development of a pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. The device physics and the impact of the valence band barriers taking place in pnp HBTs are detailed. The Ge and impurities profiles optimization necessary to limit their negative influence is particularly described. Static and dynamic device characteristics are discussed.

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ESSDERC 2007 - 37th European Solid State Device Research Conference

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