微尺度变形和应力分析的测量技术

D. Vogel, E. Auerswald, J. Auersperg, S. Rzepka, B. Michel
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引用次数: 5

摘要

本文综述了目前用于局部应用的应变/应力测量工具-数字图像相关(DIC)技术的变形和应力测量,微罗曼和电子衍射的应力测量。所选择的方法具有1 μm或更高的空间测量分辨率,这使得它们非常适合满足高梯度物体的应变和应力分析的典型需求,例如先进的MEMS,半导体器件和3D集成电路组件。DIC方法应用于应力测量,这已经抓住了过去几年的不同实验室,更详细地描述。通过DIC和microroraman方法确定tsv应力的例子说明了这些方法在当前感兴趣的电子元件应力分析中的应用。最后,对DIC技术、微罗曼技术和电子衍射技术(EBSD)进行了简要比较。
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Measuring techniques for deformation and stress analysis in micro-dimensions
The paper reviews some of the currently used strain / stress measurement tools developed for rather local application - deformation and stress measurement by Digital Image Correlation (DIC) techniques, microRaman, and electron diffraction for stress measurement. The selected methods possess spatial measurement resolutions of 1 μm or better, which makes them ideal to meet typical demands for strain and stress analyses on objects with high gradients, like e.g. advanced MEMS, semiconductor devices, and components of 3D IC integration. DIC methods applied to stress measurement, which have been seized past years by different labs, are described in more detail. Examples of stress determination on TSVs by DIC and microRaman approaches illustrate the utilization of these methods to analyze stresses in electronics components of current interest. Finally, a brief comparison between the DIC, microRaman and electron diffraction techniques (EBSD) is given.
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