{"title":"具有肖特基隧道源极和漏极的新型石墨烯沟道场效应晶体管","authors":"Jing Zhu, J. Woo","doi":"10.1109/ESSDERC.2007.4430923","DOIUrl":null,"url":null,"abstract":"In this paper, a novel concept of graphene channel FET with highly doped silicon source/drain is proposed. The current-voltage characteristics are analyzed and the optimized design parameters are presented by numerical analysis and device simulation. Such novel graphene channel MOSFETs on FDSOI or on insulator are found to have much superior current drive and transconductance than silicon MOSFETs.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A novel graphene channel field effect transistor with Schottky tunneling source and drain\",\"authors\":\"Jing Zhu, J. Woo\",\"doi\":\"10.1109/ESSDERC.2007.4430923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel concept of graphene channel FET with highly doped silicon source/drain is proposed. The current-voltage characteristics are analyzed and the optimized design parameters are presented by numerical analysis and device simulation. Such novel graphene channel MOSFETs on FDSOI or on insulator are found to have much superior current drive and transconductance than silicon MOSFETs.\",\"PeriodicalId\":103959,\"journal\":{\"name\":\"ESSDERC 2007 - 37th European Solid State Device Research Conference\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC 2007 - 37th European Solid State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2007.4430923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel graphene channel field effect transistor with Schottky tunneling source and drain
In this paper, a novel concept of graphene channel FET with highly doped silicon source/drain is proposed. The current-voltage characteristics are analyzed and the optimized design parameters are presented by numerical analysis and device simulation. Such novel graphene channel MOSFETs on FDSOI or on insulator are found to have much superior current drive and transconductance than silicon MOSFETs.
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