{"title":"双平衡3-18 GHz电阻HEMT单片混频器","authors":"T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak","doi":"10.1109/MCS.1992.186027","DOIUrl":null,"url":null,"abstract":"A double-balanced (DB) 3-18-GHz resistive high electron mobility transistor (HEMT) monolithic mixer has been developed. This mixer consisted of a AlGaAs-InGaAs HEMT quad, an active local oscillator (LO) balun, and two passive baluns, RF and IF. At 16-dBm LO power, this mixer achieved conversion losses of 7.5-9.0 dB for 4-14 GHz RF and 7.5-11.0 dB for 3-18 GHz RF. The simulated conversion loss was in agreement with the measurement results. A third-order input intercept of +26 dBm was achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. This design is for a DB resistive HEMT MMIC mixer covering up to 6:1 bandwidth.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A double balanced 3-18 GHz resistive HEMT monolithic mixer\",\"authors\":\"T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak\",\"doi\":\"10.1109/MCS.1992.186027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A double-balanced (DB) 3-18-GHz resistive high electron mobility transistor (HEMT) monolithic mixer has been developed. This mixer consisted of a AlGaAs-InGaAs HEMT quad, an active local oscillator (LO) balun, and two passive baluns, RF and IF. At 16-dBm LO power, this mixer achieved conversion losses of 7.5-9.0 dB for 4-14 GHz RF and 7.5-11.0 dB for 3-18 GHz RF. The simulated conversion loss was in agreement with the measurement results. A third-order input intercept of +26 dBm was achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. This design is for a DB resistive HEMT MMIC mixer covering up to 6:1 bandwidth.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.186027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A double balanced 3-18 GHz resistive HEMT monolithic mixer
A double-balanced (DB) 3-18-GHz resistive high electron mobility transistor (HEMT) monolithic mixer has been developed. This mixer consisted of a AlGaAs-InGaAs HEMT quad, an active local oscillator (LO) balun, and two passive baluns, RF and IF. At 16-dBm LO power, this mixer achieved conversion losses of 7.5-9.0 dB for 4-14 GHz RF and 7.5-11.0 dB for 3-18 GHz RF. The simulated conversion loss was in agreement with the measurement results. A third-order input intercept of +26 dBm was achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. This design is for a DB resistive HEMT MMIC mixer covering up to 6:1 bandwidth.<>
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