{"title":"GaAs整流——功率mos门控晶体管高频工作的使能技术","authors":"S. Anderson","doi":"10.1109/ISPSD.1996.509445","DOIUrl":null,"url":null,"abstract":"This paper discusses three applications of GaAs rectification. The first application is a 600 V GaAs rectifier for power factor correction, the second is the low voltage application of GaAs in synchronous rectification and the third application is a medium voltage GaAs rectifier in output rectification. These applications of GaAs rectification demonstrate the potential performance improvement of this technology. Applications that can justify the cost of GaAs generally benefit in terms of switching performance at elevated temperature or ultra-low Rdson as shown by the examples in this paper.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"GaAs rectification-an enabling technology for high frequency operation of power MOS-gated transistors\",\"authors\":\"S. Anderson\",\"doi\":\"10.1109/ISPSD.1996.509445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses three applications of GaAs rectification. The first application is a 600 V GaAs rectifier for power factor correction, the second is the low voltage application of GaAs in synchronous rectification and the third application is a medium voltage GaAs rectifier in output rectification. These applications of GaAs rectification demonstrate the potential performance improvement of this technology. Applications that can justify the cost of GaAs generally benefit in terms of switching performance at elevated temperature or ultra-low Rdson as shown by the examples in this paper.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文讨论了砷化镓整流的三种应用。第一个应用是用于功率因数校正的600 V GaAs整流器,第二个应用是用于同步整流的GaAs低压应用,第三个应用是用于输出整流的中压GaAs整流器。这些GaAs整流的应用证明了该技术的潜在性能改进。可以证明砷化镓成本的应用通常在高温或超低Rdson下的开关性能方面受益,如本文中的示例所示。
GaAs rectification-an enabling technology for high frequency operation of power MOS-gated transistors
This paper discusses three applications of GaAs rectification. The first application is a 600 V GaAs rectifier for power factor correction, the second is the low voltage application of GaAs in synchronous rectification and the third application is a medium voltage GaAs rectifier in output rectification. These applications of GaAs rectification demonstrate the potential performance improvement of this technology. Applications that can justify the cost of GaAs generally benefit in terms of switching performance at elevated temperature or ultra-low Rdson as shown by the examples in this paper.