单位电流增益截止频率为850GHz的AlInAs/GaAsSb/InGaAsSb双异质结双极晶体管设计

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930118

Y. liu, Yu-Tzu Liao, Jian-jang Huang, Yuh‐Renn Wu

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引用次数: 0

摘要

在本工作中，设计双异质结双极晶体管(dhbt)是为了提高单位电流增益截止频率(fT)。我们提出使用复合梯度发射极，并在基极和发射极之间增加一个凸壁层来增强fT。这些结果显示了这些dhbt的高fT。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of AlInAs/GaAsSb/InGaAsSb Double Heterojunction Bipolar Transistors for The Unit Current Gain Cutoff Frequency of 850GHz

In this work, the design of double heterojunction bipolar transistors (DHBTs) is to improve the unit current gain cutoff frequency (fT). We proposed using a compositionally graded emitter and adding a ledge layer between the base and the emitter to enhance fT. These results exhibit the high fT of these DHBTs.

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2022 Compound Semiconductor Week (CSW)

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