弗劳恩霍夫目前和未来的3D活动

A. Heinig, Muhammad Waqas Chaudhary, P. Schneider, P. Ramm, J. Weber
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引用次数: 1

摘要

在这次演讲中,我们将展示不同的tsv制造方法,这些方法会导致不同的形状和尺寸。例如,将钨填充的非常小的tsv(小于5um)制成非常薄的2D芯片(厚度小于50um)的几何形状。还解释了安装不同芯片到2.5D和真正的3D系统的不同组装技术。在高带宽处理器存储器通信的实际示例中,演示了这种2.5或3D集成系统的使用。
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Current and future 3D activities at Fraunhofer
In this presentation we will show different manufacturing approaches for TSVs which results in different shapes and dimensions. For example, geometries for tungsten filled very small TSVs (smaller than 5um) into very thin 2D chips (under 50um thickness) are shown. Also different assembly technologies for the mounting of the different chips to 2.5D and real 3D systems are explained. The usage of such 2.5 or 3D integrated systems in real world examples for high bandwidth processor memory communications are demonstrated.
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