基于InGaAs/GaSb芯壳纳米线的垂直栅全能晶体管双开关操作演示

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930398

H. Gamo, J. Motohisa, K. Tomioka

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引用次数: 0

摘要

我们在Si上使用InGaAs/GaSb核壳纳米线演示了垂直栅全能场效应晶体管。该器件通过改变偏置极性，可以在同一沟道结构中同时工作p沟道场效应管和n沟道场效应管。在VDS = - 1.00 V时，p沟道场效应管模式的最小亚阈值斜率(SS)为115 mV/ 10年，离子/ off比约为102。在VDS = 0.50 V时，n沟道TFET模式的SS为105 mV/ 10年。

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Demonstration of dual switching operation of vertical gate-all-around transistor using InGaAs/GaSb core-shell nanowires on Si

We demonstrated vertical gate-all-around field-effect transistor using the InGaAs/GaSb core-shell nanowires on Si. This device can operate both p-channel FET and n-channel TFET in the same channel architecture by changing bias polarity. The p-channel FET mode had a minimum subthreshold slope (SS) of 115 mV/decade and Ion/Ioff ratio of around 10² at VDS = −1.00 V. The n-channel TFET mode showed SS of 105 mV/decade at VDS = 0.50 V.

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2022 Compound Semiconductor Week (CSW)

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