ka波段高效宽带单片伪晶HEMT放大器

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185995

H. Tserng, P. Saunier, Y. Kao

{"title":"ka波段高效宽带单片伪晶HEMT放大器","authors":"H. Tserng, P. Saunier, Y. Kao","doi":"10.1109/MCS.1992.185995","DOIUrl":null,"url":null,"abstract":"The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"High-efficiency broadband monolithic pseudomorphic HEMT amplifiers at Ka-band\",\"authors\":\"H. Tserng, P. Saunier, Y. Kao\",\"doi\":\"10.1109/MCS.1992.185995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.185995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

讨论了采用掺杂通道功率伪晶高电子迁移率晶体管(hemt)的高效率、宽带(高达7 GHz)单片ka波段放大器的设计和性能。演示了输出功率高达500mw，功率附加效率高达40%的放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

High-efficiency broadband monolithic pseudomorphic HEMT amplifiers at Ka-band

The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

自引率

0.00%

发文量

期刊最新文献

12 W monolithic X-band HBT power amplifier Broad-band electromagnetic radiation damage in GaAs MESFETs Extremely low power transmitter/receiver GaAs MMIC circuits at L band Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions A GaAs IC broadband variable ring oscillator and arbitrary integer divider