一种用于5G通信系统的38ghz谐波抑制> 40dbc的三倍频器

M. Bassi, Giovanni Boi, F. Padovan, J. Fritzin, Stefano Di Martino, Daniel Knauder, A. Bevilacqua
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引用次数: 0

摘要

在所有通信系统中,产生具有极低杂散电平的载波信号是一个关键挑战,特别是那些在毫米波下工作的通信系统,其中频率乘法器通常用于打破高频工作和低相位噪声之间的权衡。这封信描述了一种专为覆盖第五代新无线电39 ghz频率范围而定制的三倍频器。通过采用边组合概念,再加上单级多相滤波器和多点注入锁定环形振荡器的组合,所提出的倍频器能够在大分数带宽上提供鲁棒且一致的高谐波抑制比。测量的倍频器采用28纳米体CMOS技术制造,在35%的分数带宽上具有40 dbc的谐波抑制,而在0.9 v电源下仅消耗25 mW。据我们所知,所提出的乘法器在CMOS和BiCMOS技术的最先进乘法器中实现了最高的谐波抑制,同时面积缩小了60%。
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A 39-GHz Frequency Tripler With >40-dBc Harmonic Rejection for 5G Communication Systems in 28-nm Bulk CMOS
The generation of the carrier signal with a very low spur level is a key challenge in all the communication systems, especially those operating at mm-waves, where a frequency multiplier is typically used to break the tradeoff between high frequency of operation and low phase noise. This letter describes a frequency tripler tailored to cover the fifth generation new radio 39-GHz frequency range. By embracing the edge-combining concept, together with the combination of a single-stage polyphase filter and a multipoint injection-locked ring oscillator, the proposed frequency multiplier is able to offer robust and consistent high harmonic rejection ratio over a large fractional bandwidth. Fabricated in 28-nm bulk CMOS technology, the measured frequency multiplier features >40-dBc harmonic rejection over an outstanding 35% fractional bandwidth, while consuming 25 mW only from 0.9-V supply. To the best of our knowledge, the proposed multiplier achieves the highest harmonic rejection among the state-of-the-art multipliers in CMOS and BiCMOS technologies, while having 60% smaller area.
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