{"title":"具有片上基准电压的低于1v的低压差稳压器","authors":"Wei-Jen Huang, Shen-Iuan Liu","doi":"10.1109/ASSCC.2008.4708754","DOIUrl":null,"url":null,"abstract":"A sub-1V 50 mA low-dropout regulator (LDR) with an on-chip voltage reference is presented. This LDR utilizes the push-pull output stage to reduce the size of the power PMOS transistor. The proposed LDR with the on-chip voltage reference has been fabricated in 0.18 mum CMOS process, and its active area is 0.148 mm2. Experimental results demonstrate that the voltage reference and the LDR work for the supply voltage of 0.6 V~1.2V. For the proposed LDR under a supply of 0.6 V, the measured settling time, voltage dip, and quiescent current are less than 2mus, 50 mV, and 16.6 muA, respectively.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A sub-1v low-dropout regulator with an on-chip voltage reference\",\"authors\":\"Wei-Jen Huang, Shen-Iuan Liu\",\"doi\":\"10.1109/ASSCC.2008.4708754\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A sub-1V 50 mA low-dropout regulator (LDR) with an on-chip voltage reference is presented. This LDR utilizes the push-pull output stage to reduce the size of the power PMOS transistor. The proposed LDR with the on-chip voltage reference has been fabricated in 0.18 mum CMOS process, and its active area is 0.148 mm2. Experimental results demonstrate that the voltage reference and the LDR work for the supply voltage of 0.6 V~1.2V. For the proposed LDR under a supply of 0.6 V, the measured settling time, voltage dip, and quiescent current are less than 2mus, 50 mV, and 16.6 muA, respectively.\",\"PeriodicalId\":143173,\"journal\":{\"name\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2008.4708754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
提出了一种具有片上基准电压的低于1v的50ma低压差稳压器(LDR)。该LDR利用推挽输出级来减小功率PMOS晶体管的尺寸。采用0.18 μ m CMOS工艺制作了片上基准电压的LDR,其有源面积为0.148 mm2。实验结果表明,基准电压和LDR工作在0.6 V~1.2V的电源电压范围内。在0.6 V电源下,LDR的稳定时间、电压降和静态电流分别小于2mus、50mv和16.6 muA。
A sub-1v low-dropout regulator with an on-chip voltage reference
A sub-1V 50 mA low-dropout regulator (LDR) with an on-chip voltage reference is presented. This LDR utilizes the push-pull output stage to reduce the size of the power PMOS transistor. The proposed LDR with the on-chip voltage reference has been fabricated in 0.18 mum CMOS process, and its active area is 0.148 mm2. Experimental results demonstrate that the voltage reference and the LDR work for the supply voltage of 0.6 V~1.2V. For the proposed LDR under a supply of 0.6 V, the measured settling time, voltage dip, and quiescent current are less than 2mus, 50 mV, and 16.6 muA, respectively.