P.M. Smith, P. Chao, P. Ho, K. Duh, M. Kao, J. Ballingall, S. Allen, A. Tessmer
{"title":"微波 InAlAs/InGaAs/InP HEMT：现状与应用","authors":"P.M. Smith, P. Chao, P. Ho, K. Duh, M. Kao, J. Ballingall, S. Allen, A. Tessmer","doi":"10.1109/ICIPRM.1990.202984","DOIUrl":null,"url":null,"abstract":"The development of HEMTs based on the InAlAs/InGaAs/InP materials system for high-frequency analog applications is reported. Devices with 0.15- mu m gatelengths have demonstrated extrinsic transconductance of 1500 mS/mm and extrapolated maximum frequency of oscillation f/sub max/ greater than 450 GHz. The noise figure is the lowest of any room-temperature receiver technology over the 5 to 100 GHz frequency range. Prospects for power amplification are excellent: power-added efficiency of 41% has already been demonstrated at 60 GHz. The integration of these devices into monolithic microwave integrated circuits (MMICs) is discussed.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Microwave InAlAs/InGaAs/InP HEMTs: status and applications\",\"authors\":\"P.M. Smith, P. Chao, P. Ho, K. Duh, M. Kao, J. Ballingall, S. Allen, A. Tessmer\",\"doi\":\"10.1109/ICIPRM.1990.202984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of HEMTs based on the InAlAs/InGaAs/InP materials system for high-frequency analog applications is reported. Devices with 0.15- mu m gatelengths have demonstrated extrinsic transconductance of 1500 mS/mm and extrapolated maximum frequency of oscillation f/sub max/ greater than 450 GHz. The noise figure is the lowest of any room-temperature receiver technology over the 5 to 100 GHz frequency range. Prospects for power amplification are excellent: power-added efficiency of 41% has already been demonstrated at 60 GHz. The integration of these devices into monolithic microwave integrated circuits (MMICs) is discussed.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.202984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave InAlAs/InGaAs/InP HEMTs: status and applications
The development of HEMTs based on the InAlAs/InGaAs/InP materials system for high-frequency analog applications is reported. Devices with 0.15- mu m gatelengths have demonstrated extrinsic transconductance of 1500 mS/mm and extrapolated maximum frequency of oscillation f/sub max/ greater than 450 GHz. The noise figure is the lowest of any room-temperature receiver technology over the 5 to 100 GHz frequency range. Prospects for power amplification are excellent: power-added efficiency of 41% has already been demonstrated at 60 GHz. The integration of these devices into monolithic microwave integrated circuits (MMICs) is discussed.<>
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