重掺杂 Ge 中的反常掺杂曲线

Extended Abstracts of the Fifth International Workshop on Junction Technology Pub Date : 2005-06-07 DOI:10.1109/IWJT.2005.203875

K. Hosawa, K. Matsumoto, K. Shibahara

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摘要

本文对离子注入法在 Ge 中引入的砷和锑掺杂剖面进行了评估。中等剂量植入而未发生非晶化的剖面与模拟剖面没有严重差异。高剂量植入会导致掺杂剂意外的深度渗透。这可能源于表面非晶化层的氧化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Anomalous doping profile in heavily doped Ge

In this paper, the As and Sb dopant profiles in Ge introduced by ion implantation was evaluated. Profiles for medium dose implantation without amorphizing did not have severe discrepancy between simulated profiles. High dose implantation gave rise to unexpected deep penetration of the dopant. This probably originates from oxidation of the surface amorphized layer.

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Extended Abstracts of the Fifth International Workshop on Junction Technology

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